BF513,215 datasheet

Маркировка

BF513,215
Производитель

NXP Semiconductors
Описание

NXP Semiconductors BF513,215 Configuration: Single Continuous Drain Current: 30 mA Current - Test: 5mA Current Rating: 30mA Drain Current (idss At Vgs=0): 10 mA to 18 mA Drain Source Voltage Vds: 20 V Frequency: 100MHz Gain: - Gate-source Breakdown Voltage: 20 V Gate-source Cutoff Voltage: 3 V ID_COMPONENTS: 1949142 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Drain Gate Voltage: 20 V Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Noise Figure: 1.5dB Package / Case: SST3 (SOT-23-3) Power - Output: - Power Dissipation: 250 mW Series: - Transistor Polarity: N-Channel Transistor Type: N-Channel JFET Voltage - Rated: 20V Voltage - Test: 10V Product Category: Transistors RF JFET RoHS: yes Drain Source Voltage VDS: 20 V Gate-Source Cutoff Voltage: 3 V Gate-Source Breakdown Voltage: 20 V Drain Current (Idss at Vgs=0): 10 mA to 18 mA Factory Pack Quantity: 3000 Part # Aliases: BF513 T/R Other Names: 933505300215, BF513 T/R
Количество страниц

9 шт.
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78,38 KB